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Dual Power Operational Amplifier
TCA 2465
Overview Features High output peak current of twice 2.5 A Twice 2.0 A output peak current for TCA 2465 G Large supply voltage range up to 42 V High slew rate of 2 V/s Outputs fully protected (DC short-circuit proof for P-SIP-9-1 VS up to 18 V; for P-DSO-20-6 VS up to 14 V) * Thermal overload protection * Inhibit input enables "tristate" outputs * Integrated clamp diodes * * * * *
Bipolar IC
P-SIP-9-1
P-DSO-20-6
Type TCA 2465 TCA 2465 G Description
Ordering Code Q67000-A8109 Q67000-A8334
Package P-SIP-9-1 P-DSO-20-6
The IC contains two identical op amps, each supplying a high output current of 2.5 A at supply voltages between 3 V and 20 V. Internal compensation permits negative feedback of the amplifiers up to a min. of 20 dB. Both amplifiers can be disconnected at V8 2 V via an inhibit input. Integrated protective circuits protect the outputs against short-circuit to + VS and - VS and prevent thermal overloading of the IC. TCA 2465 G comes in a special surface-mounted power package similar to P-DSO-20 and delivers twice 2.0 A output peak current.
Semiconductor Group
1
1998-02-01
TCA 2465
TCA 2465
1
9
+ VS Output 1 N.C. -VS Inverting Input 1 Non-Inverting Input 1 Frequency Compensation 1
Output 1 -Input 1 +Input 1 - VS +V S Inhibit Input +Input 2 -Input 2 Output 2
IEP00550
TCA 2465 G
1 2 3 4 5 6 7 8 9 10
20 19 18 17 16 15 14 13 12 11
IEP00888
Inhibit Output 2 N.C. -VS Inverting Input 2 Non-Inverting Input 2 Frequency Compensation 2
Figure 1
Pin Configuration (top view)
Semiconductor Group
2
1998-02-01
TCA 2465
+VS 5 80 dB +Input 1 -Input 1 3 2 0 dB
+ -
1
Output 1
Inhibit 6 Input
TCA 2465
Power Limitation and Thermal Protection
+Input 2 -Input 2
7 8
+ -
9 0 dB 80 dB 4
IEB00551
Output 2
-VS
Figure 2
Block Diagram TCA 2465
Semiconductor Group
3
1998-02-01
TCA 2465
+VS 1 80 dB Non-Inverting 9 Input 1 8 Inverting Input 1 0 dB
+ -
2
Output 1
Frequency Compensation
10 Frequency Compensation 1
Inhibit
20
TCA 2465 G
Power Limitation and Temperature Protection 11 Frequency Compensation 2 19 0 dB
Frequency Compensation Non-Inverting Input 2 Inverting Input 2 12 13
+ -
Output 2
80 dB 4...7,14...17
IEB00889
-VS
Figure 3
Block Diagram TCA 2465 G
Semiconductor Group
4
1998-02-01
TCA 2465
Absolute Maximum Ratings TC = - 40 to 85 C
Note: Values in brackets refer to TCA 2465 G
Parameter Supply voltage Differential input voltage Output current Output current Supply current Ground current Input voltage Inhibit input Junction temperature Storage temperature range
1)
Symbol min.
Limit Values max. 21 (- VS) + (VS) 2.5 (2)1) - 5.5 (2)1) 5 (2)1) - - - 2.5 (- 2)1) - 1.5 - 5 (- 2)1) - 5.5 (- 2)1) - VS - VS - - 50
Unit Remarks V V A A A A V V C C V2-3 or V8-7
VS VID IQ IQ IS IGND VI V6 Tj Tstg
I1 or I9 VS 15 V; VQ < - VS IS I4 V2, V3, V7, V8
-
VS VS
150 150
t < 1 ms, f 400 Hz
Semiconductor Group
5
1998-02-01
TCA 2465
Operating Range Parameter Supply voltage Output current Case temperature Voltage gain Forward current IF of free wheeling diodes Thermal resistance junction - ambient junction - case Thermal resistance junction - ambient junction - case Thermal resistance junction - ambient junction - case
1)
Symbol
Limit Values min. max. 20 (1.3) 85 - (1.3) 3 (- 1.3) - 40 20 -
Unit Remarks V A C dB A - -
1)
VS IQ TC GVmin IF
- -
Rth jA Rth jC Rth jA Rth jC Rth jA Rth jC
- - - - - -
60 5 60 12 (70) (22)
K/W P-SIP-9-1 K/W P-SIP-9-1 K/W P-DIP-16-2 K/W P-DIP-16-2 K/W (soldered) P-DSO-20-6 K/W P-DSO-20-6
PD = 12 W P-SIP-9-1 PD = 3.5 W P-DSO-20-6
Semiconductor Group
6
1998-02-01
TCA 2465
Characteristics VS = 10 V; Tj = 25 C, unless otherwise specified
Note: Values in brackets refer to TCA 2465; G
Parameter Open-loop supply current consumption S1 in position 1 S1 in position 2 Input offset voltage Input offset current Input current Output voltage RL = 12 ; f = 1 kHz RL = 4 ; f = 1 kHz1) RL = 470 ; f = 40 kHz Input resistance f = 1 kHz Open-loop voltage gain f = 100 kHz Common-mode input voltage range Common-mode rejection Supply voltage rejection Temperature coefficient of VIO - 40 C Tj + 85 C Temperature coefficient of IIO - 40 C Tj + 85 C Slew rate of VQ for non-inverting operation Slew rate of VQ for inverting operation Noise voltage (DIN 45405, referred to input) Inhibit input (referred to - VS) V6 for IC turned OFF V6 for IC turned ON Symbol min. Limit Values typ. - 30 - - 0.25 9 8.5 8 5 80 max. 5 50 10 100 1 - - - - - mA mA mV nA Unit Test Circuit 1; 12 1; 12 2; 13 3; 14 3; 14 4; 15 4; 15 4; 15 4; 15 5; 16 6; 17 6; 17 7; 18
IS IS VIO IIO II VQ pp VQ pp VQ pp RI GVO VIC kCMR kSVR
VIO IIO
- - - 10 - 100 - 8.5 8 - 1 70 7/- 10 70 - 70 - - - - -
A
V V V M dB V dB dB
7.5/- 10.5 - 80 - 80 50 0.4 2 (0.5) 2 (0.5) 3 - - - - - - -
V/K 2; 13 nA/K 3; 14 V/s 8; 19 V/s 9; 20 V 1; 12
SR SR Vn
V6 OFF V6 ON
2 -
- -
- 0.8
V V
1; 12 1; 12
Semiconductor Group
7
1998-02-01
TCA 2465
Characteristics (cont'd) VS = 10 V; Tj = 25 C, unless otherwise specified
Note: Values in brackets refer to TCA 2465; G
Parameter H-input current, V6 = 5 V2) L-input current, V6 = 0 V2) Symbol min. Limit Values typ. 0.1 0.5 10 10 1 1 max. 0.5 3 20 20 - - A A s s A A - - - - - - Unit Test Circuit 1; 12 1; 12 1; 12 1; 12 1; 12 1; 12
Turn-ON dead time referred to I I1; 9 I > A3) Turn-OFF dead time V6 OFF/ON tD OFF 3) I I 1; 9 I < 1 A Short-circuit current4) (switch S3 closed) Short-circuit current4) (switch S4 closed)
1) 2) 3) 4)
I6H I6 tD ON
ISC ISC
Only for P-SIP-9-1 Referred to - VS Switch S2 closed Only for P-SIP-9-1, for P-DSO-20-6 VS 7 V
Semiconductor Group
8
1998-02-01
TCA 2465
Test Circuits
+VS
1 12, 9 20 13, 8 4 +
11, 10 19, 2
100 k
1
4
10 k
10 k
220 nF
S1
- VS
IES01367
Figure 4
Open-Loop Supply Current Consumption; Noise Voltage (TCA 2465 G)
+ VS 11, 10 + 20 4.7 k 1
VQ
VQ = 100 V O
47 47 220 nF
- VS
IES01368
Figure 5
Input Offset Voltage; Temperature Coefficient of VIO (TCA 2465 G)
Semiconductor Group
9
1998-02-01
TCA 2465
+ VS S1 1 M (220 pF)
11, 10 -
VQ
20 1
4.7 k +
S2
1 M
=
100
47
Figure 6
Input Offset Current; Input Current; Temperature Coefficient of IIO (TCA 2465 G)
+ VS S 10 F 11, 10 1 M + 20 4.7 k 4.7 k 220 nF 42.3 k 1
V
- VS
Figure 7
Output Voltage; Input Resistance (TCA 2465 G)
10 1998-02-01
Semiconductor Group
+ - VS
220 nF
IES01369
VQ RL
IES01370
TCA 2465
+ VS
G V0 = 20 x log (101 x (VQ / V ( (
10 k
V
100 k
10 k 11, 10 -
f = 100 Hz
10 k
=
10
- VS
Figure 8
Open-Loop Voltage Gain GVO (TCA 2465 G)
4.7 k
=
100
10 + 20 1 220 nF 8.2
~ ~
f = 100 Hz
- VS
Figure 9
Common Mode Voltage Gain GVC Common-Mode Rejection kCMR (dB) = GVO (dB) - GVC (dB) (TCA 2465 G)
Semiconductor Group
11
-
+ 20 1 220 nF 8.2
IES01371
~ ~
100
VQ
+ VS
11, 10
VQ
IES01372
1998-02-01
TCA 2465
+ VS
k SVR (dB) = 20 x log ( VQ / (GV x VS ( (
1000 F VS 56 220 nF
~ ~
f = 100 Hz
470
- VS
Figure 10 Supply Voltage Rejection kSVR (TCA 2465 G)
+ VS
+ 10 k 20 91 k 1 8.2
~ ~
Square-Wave (Peak-to-Peak) 0.6 V - VS
Figure 11 Slew Rate for Non-Inverting Operation (TCA 2465 G)
Semiconductor Group 12 1998-02-01
+
47
-
47
11, 10
VQ
20 1 220 nF 8.2
IES01373
(220 pF)
11, 10
VQ
10 k
220 nF
IES01374
TCA 2465
+ VS 10 k 100 k (220 pF)
11, 10
10 k
Figure 12 Slew Rate for Inverting Operation (TCA 2465 G)
Semiconductor Group
+ 20 1 220 nF 8.2 - VS
~ ~
Square-Wave (Peak-toPeak) 0.6 V
-
VQ
IES01375
13
1998-02-01
TCA 2465
a) Amplifier; GV = 5
+ 10 V (220 pF)
1 12, 9 13, 8 4.7 k + 4
11, 10 19, 2
20
22 k
1
12
~ ~
- 10 V
5.6 k
220 nF
IES01376
b) Voltage follower TCA 2465 G
+ 10 V 220 pF
1 12, 9 13, 8 + 4
11, 10 19, 2
~ ~
20
1 220 nF
12
- 10 V
IES01377
Figure 13 Non-Inverting Operation (TCA 2465 G)
Semiconductor Group
14
1998-02-01
TCA 2465
a) Amplifier; GV = - 5
+ 10 V
1 12 k 12, 9 13, 8 + 4 15 k
11, 10 19, 2
20 75 k
1 220 nF
12
~ ~
- 10 V
IES01378
b) Inverter TCA 2465 G
+ 10 V 220 pF
1 12, 9 13, 8 + 4 10 k
11, 10 19, 2
20 10 k
1 220 nF
12
~ ~
- 10 V
IES01379
Figure 14 Inverting Operation (TCA 2465 G)
Semiconductor Group
15
1998-02-01
TCA 2465
+ VS
5 3, 7 1 2 S1 6 2, 8 4 100 k 1 + 1, 9
S3
4
10 k
10 k
220 nF
S4
S2
- VS
IES00553
Figure 15 Open-Loop Supply Current Consumption; Noise Voltage (TCA 2465/A)
+V S
+ 6 4.7 k 1
VQ
VQ = 100 V O
47 47 220 nF
- VS
IES00554
Figure 16 Input Offset Voltage; Temperature Coefficient of VIO (TCA 2465/A)
Semiconductor Group
16
1998-02-01
TCA 2465
+ VS S1 1 M
S2 4.7 k +
1 M
=
100
47
Figure 17 Input Offset Current; Input Current; Temperature Coefficient of IIO (TCA 2465)
+ VS S 10 F 1 M + 6 4.7 k 4.7 k 220 nF 42.3 k 1
V
- VS
Figure 18 Output Voltage; Input Resistance (TCA 2465)
Semiconductor Group
17
+ 6 1 - VS
-
VQ
220 nF
IES00555
VQ RL
IES00556
1998-02-01
TCA 2465
+V S
G V0 = 20 x log (101 x (VQ / V ( (
10 k
V
100 k
10 k
f = 100 Hz
10 k
=
10
Figure 19 Open-Loop Voltage Gain GVO (TCA 2465)
=
100
10 + 6 1 220 nF 8.2
~ ~
f = 100 Hz
- VS
Figure 20 Common Mode Voltage Gain GVC Common-Mode Rejection kCMR (dB) = GVO (dB) - GVC (dB) (TCA 2465/A)
Semiconductor Group
18
-
4.7 k
+ 6 1 220 nF 8.2 - VS
IES00557
~ ~
100
-
VQ
+ VS
VQ
IES00558
1998-02-01
TCA 2465
+ VS
k SVR (dB) = 20 x log ( VQ / (GV x VS ( (
1000 F VS 56 220 nF
~ ~
f = 100 Hz
470
- VS
Figure 21 Supply Voltage Rejection kSVR (TCA 2465)
+ VS
+ 10 k 6 91 k 1 8.2
~ ~
Square-Wave (Peak-to-Peak) 0.6 V - VS
Figure 22 Slew Rate for Non-Inverting Operation (TCA 2465)
Semiconductor Group
+
47
-
47
VQ
6 1 220 nF 8.2
IES00559
VQ
10 k
220 nF
IES00560
19
1998-02-01
TCA 2465
+ VS 10 k 100 k
10 k
- VS
Figure 23 Slew Rate for Inverting Operation (TCA 2465)
Note: Values in brackets refer to TCA 2465 A
Amplifier; GV = 5
+10 V
5 3, 7 2, 8 4.7 k + 4 6 22 k 1 4 1, 9
~ ~
-10 V
Figure 24 Non-Inverting Operation (TCA 2465)
Semiconductor Group
+ 6 1 220 nF 8.2
~ ~
Square-Wave (Peak-toPeak) 0.6 V
-
VQ
IES00561
5.6 k
220 nF
IES00562
20
1998-02-01
TCA 2465
Amplifier; GV = - 5
+10 V
5 12 k 3, 7 2, 8 + 4 15 k 6 75 k 1 220 nF 4 1, 9
~ ~
-10 V
IES00564
Figure 25 Inverting Operation (TCA 2465)
Semiconductor Group
21
1998-02-01
TCA 2465
Safe Operating Area (SOA) Peak Output Current versus Collector-Emitter Voltage Tj = 25 C, VCE = + VS - VQ or VCE = - VS - VQ
4.0 A 3.5 3.0
IED00576
Max. Permissible Power Dissipation versus Case Temperature
24
IED00566
Q
Ptot
W 20 TCA 2465
16
2.5 2.0 1.5 1.0
12
8
4
0.5 0
TCA 2465G
0
10
20
30
40 V 50 V CE
0
0
25
50
75
100
C
150
TC
Supply Current versus Supply Voltage Tj = 25 C
50
IED00567
Input Current versus Junction Temperature VS = 10 V
300
IED00568
S mA
40
nA 250
30
200
20
150
10
0
0
5
10
15
20 V 25 VS
100 -40 -25
0
25
50
75 C Tj
Semiconductor Group
22
1996-05-01
TCA 2465
Open-Loop Voltage Gain versus Frequency
100
IED00569
Phase Response versus Frequency VS = 10 V; Tj = 25 C
0 - Deg. -30
IED00570
G VO dB
80 70 60 50 40 30 20 10 01 10 10 2
VS = 10 V T j = 25 C
-60
-90
-120
-150
10 3
10 4
10 5 Hz 10 6 f
-180 1 10
10 2
10 3
10 4
10 5 10 6 Hz 10 7 f
TCA 2465, G Open-Loop Voltage Gain versus Frequency VS = 10 V, Tj = 25 C
100
IED00571
TCA 2465, G Phase Response versus Frequency VS = 10 V, Tj = 25 C
0 - Deg. -30
IED00570
G VO dB
80 70 60 50 40 30 20 10 01 10 10 2 10 3 10 4 10 5 Hz 10 6 f
C comp = 220 pF C comp = 100 pF C comp = 0 pF
-60
-90
-120
-150
-180 1 10
10 2
10 3
10 4
10 5 10 6 Hz 10 7 f
Semiconductor Group
23
1996-05-01
TCA 2465
Common-Mode Rejection versus Case Temperature VS = 10 V
90
IED00573
Saturation Voltage versus Peak Output Current Tj = 25 C
2.0
IED00574
k CMR
dB 85
VSat
V 1.5
T j = 25 C
TCA 2465G
80
1.0
TCA 2465
75
0.5
70 -40 -25
0
0
25
50
75 C TC
0
0.5
1.0
1.5
2.0 A 2.5
Q
Forward Current versus Forward Voltage
3.0
IED00575
F
A
Pins 1, 9 Pin 4
T j = 25 C
2.0
TCA 2465
1.0
TCA 2465G
Pin (9) 5 Pins (7, 10) 1, 9
0
0
1.0
V
2.0
VF
Semiconductor Group
24
1996-05-01
TCA 2465
Package Outlines P-SIP-9-1 (Plastic Single In-line Package)
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". Semiconductor Group 25
Dimensions in mm 1998-02-01
GPI05038
TCA 2465
P-DSO-20-6 (Plastic Dual Small Outline Package)
2.65 max
0.35 x 45
+0.09
2.45 -0.2
0.2 -0.1
7.6 -0.2 1)
1.27 0.35 +0.15 2) 20 0.2 24x 11 0.1
0.4 +0.8 10.3 0.3
GPS05094
1 12.8 1) 10 -0.2 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Semiconductor Group 26
0.23
8 ma
x
Dimensions in mm 1998-02-01

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